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Extremely large magnetoresistance in few-layer graphene/boron–nitride heterostructures
Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistan...
Autores principales: | Gopinadhan, Kalon, Shin, Young Jun, Jalil, Rashid, Venkatesan, Thirumalai, Geim, Andre K., Neto, Antonio H. Castro, Yang, Hyunsoo |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Pub. Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4595716/ https://www.ncbi.nlm.nih.gov/pubmed/26388149 http://dx.doi.org/10.1038/ncomms9337 |
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