Microscopic basis for the band engineering of Mo(1−x)W(x)S(2)-based heterojunction

Transition-metal dichalcogenide layered materials, consisting of a transition-metal atomic layer sandwiched by two chalcogen atomic layers, have been attracting considerable attention because of their desirable physical properties for semiconductor devices, and a wide variety of pn junctions, which...

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Detalles Bibliográficos
Autores principales: Yoshida, Shoji, Kobayashi, Yu, Sakurada, Ryuji, Mori, Shohei, Miyata, Yasumitsu, Mogi, Hiroyuki, Koyama, Tomoki, Takeuchi, Osamu, Shigekawa, Hidemi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4595798/
https://www.ncbi.nlm.nih.gov/pubmed/26443124
http://dx.doi.org/10.1038/srep14808

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4595798/
https://www.ncbi.nlm.nih.gov/pubmed/26443124
http://dx.doi.org/10.1038/srep14808

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