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Microscopic basis for the band engineering of Mo(1−x)W(x)S(2)-based heterojunction

Transition-metal dichalcogenide layered materials, consisting of a transition-metal atomic layer sandwiched by two chalcogen atomic layers, have been attracting considerable attention because of their desirable physical properties for semiconductor devices, and a wide variety of pn junctions, which...

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Detalles Bibliográficos
Autores principales:	Yoshida, Shoji, Kobayashi, Yu, Sakurada, Ryuji, Mori, Shohei, Miyata, Yasumitsu, Mogi, Hiroyuki, Koyama, Tomoki, Takeuchi, Osamu, Shigekawa, Hidemi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4595798/ https://www.ncbi.nlm.nih.gov/pubmed/26443124 http://dx.doi.org/10.1038/srep14808

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