Oxygen Defect-Induced Metastability in Oxide Semiconductors Probed by Gate Pulse Spectroscopy

We investigate instability mechanisms in amorphous In-Ga-Zn-O transistors based on bias and illumination stress-recovery experiments coupled with analysis using stretched exponentials and inverse Laplace transform to retrieve the distribution of activation energies associated with metastable oxygen...

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Detalles Bibliográficos
Autores principales: Lee, Sungsik, Nathan, Arokia, Jeon, Sanghun, Robertson, John
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4597196/
https://www.ncbi.nlm.nih.gov/pubmed/26446400
http://dx.doi.org/10.1038/srep14902

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4597196/
https://www.ncbi.nlm.nih.gov/pubmed/26446400
http://dx.doi.org/10.1038/srep14902

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