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Current-limiting challenges for all-spin logic devices
All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memory structure. Here we investigate the key current-limiting factors and develop a physics-based model of ASLD through nano...
Autores principales: | Su, Li, Zhang, Youguang, Klein, Jacques-Olivier, Zhang, Yue, Bournel, Arnaud, Fert, Albert, Zhao, Weisheng |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4598875/ https://www.ncbi.nlm.nih.gov/pubmed/26449410 http://dx.doi.org/10.1038/srep14905 |
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