A Fully Transparent Resistive Memory for Harsh Environments

A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO(2)) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10(4) sec, and no significant degradation is observed in 130 cycling...

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Detalles Bibliográficos
Autores principales: Yang, Po-Kang, Ho, Chih-Hsiang, Lien, Der-Hsien, Durán Retamal, José Ramón, Kang, Chen-Fang, Chen, Kuan-Ming, Huang, Teng-Han, Yu, Yueh-Chung, Wu, Chih-I, He, Jr-Hau
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4601025/
https://www.ncbi.nlm.nih.gov/pubmed/26455819
http://dx.doi.org/10.1038/srep15087

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4601025/
https://www.ncbi.nlm.nih.gov/pubmed/26455819
http://dx.doi.org/10.1038/srep15087

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