A Fully Transparent Resistive Memory for Harsh Environments

A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO(2)) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10(4) sec, and no significant degradation is observed in 130 cycling...

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Detalles Bibliográficos
Autores principales: Yang, Po-Kang, Ho, Chih-Hsiang, Lien, Der-Hsien, Durán Retamal, José Ramón, Kang, Chen-Fang, Chen, Kuan-Ming, Huang, Teng-Han, Yu, Yueh-Chung, Wu, Chih-I, He, Jr-Hau
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4601025/
https://www.ncbi.nlm.nih.gov/pubmed/26455819
http://dx.doi.org/10.1038/srep15087
Descripción
Sumario:A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO(2)) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10(4) sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO(2) TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO(2) TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO(2) TRRAM for harsh environments.

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