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A Fully Transparent Resistive Memory for Harsh Environments

A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO(2)) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10(4) sec, and no significant degradation is observed in 130 cycling...

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Detalles Bibliográficos
Autores principales:	Yang, Po-Kang, Ho, Chih-Hsiang, Lien, Der-Hsien, Durán Retamal, José Ramón, Kang, Chen-Fang, Chen, Kuan-Ming, Huang, Teng-Han, Yu, Yueh-Chung, Wu, Chih-I, He, Jr-Hau
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4601025/ https://www.ncbi.nlm.nih.gov/pubmed/26455819 http://dx.doi.org/10.1038/srep15087

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