Quantifying the barrier lowering of ZnO Schottky nanodevices under UV light

In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO nanowire (NW) devices under illumination with UV light. We measured the I–V characteristics of ZnO nanowire devices to confirm that ZnO is an n-type semiconductor and that the on/off ratio is approx...

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Detalles Bibliográficos
Autores principales: Lu, Ming-Yen, Lu, Ming-Pei, You, Shuen-Jium, Chen, Chieh-Wei, Wang, Ying-Jhe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4601028/
https://www.ncbi.nlm.nih.gov/pubmed/26456370
http://dx.doi.org/10.1038/srep15123

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4601028/
https://www.ncbi.nlm.nih.gov/pubmed/26456370
http://dx.doi.org/10.1038/srep15123

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