Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range

The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped struct...

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Detalles Bibliográficos
Autores principales: Dyksik, Mateusz, Motyka, Marcin, Sęk, Grzegorz, Misiewicz, Jan, Dallner, Matthias, Weih, Robert, Kamp, Martin, Höfling, Sven
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4607688/
https://www.ncbi.nlm.nih.gov/pubmed/26471481
http://dx.doi.org/10.1186/s11671-015-1104-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4607688/
https://www.ncbi.nlm.nih.gov/pubmed/26471481
http://dx.doi.org/10.1186/s11671-015-1104-z

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