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Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition
This paper performs a comparative study on the statistical-variation tolerance between two crossbar architectures which are the complementary and twin architectures. In this comparative study, 10 greyscale images and 26 black-and-white alphabet characters are tested using the circuit simulator to co...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4608951/ https://www.ncbi.nlm.nih.gov/pubmed/26474886 http://dx.doi.org/10.1186/s11671-015-1106-x |
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author | Truong, Son Ngoc Shin, SangHak Byeon, Sang-Don Song, JaeSang Mo, Hyun-Sun Min, Kyeong-Sik |
author_facet | Truong, Son Ngoc Shin, SangHak Byeon, Sang-Don Song, JaeSang Mo, Hyun-Sun Min, Kyeong-Sik |
author_sort | Truong, Son Ngoc |
collection | PubMed |
description | This paper performs a comparative study on the statistical-variation tolerance between two crossbar architectures which are the complementary and twin architectures. In this comparative study, 10 greyscale images and 26 black-and-white alphabet characters are tested using the circuit simulator to compare the recognition rate with varying statistical variation and correlation parameters. As with the simulation results of 10 greyscale image recognitions, the twin crossbar shows better recognition rate by 4 % on average than the complementary one, when the inter-array correlation = 1 and intra-array correlation = 0. When the inter-array correlation = 1 and intra-array correlation = 1, the twin architecture can recognize better by 5.6 % on average than the complementary one. Similarly, when the inter-array correlation = 1 and intra-array correlation = 0, the twin architecture can recognize 26 alphabet characters better by 4.5 % on average than the complementary one. When the inter-array correlation = 1 and intra-array correlation = 1, the twin architecture is better by 6 % on average than the complementary one. By summary, we can conclude that the twin crossbar is more robust than the complementary one under the same amounts of statistical variation and correlation. |
format | Online Article Text |
id | pubmed-4608951 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-46089512015-10-21 Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition Truong, Son Ngoc Shin, SangHak Byeon, Sang-Don Song, JaeSang Mo, Hyun-Sun Min, Kyeong-Sik Nanoscale Res Lett Nano Express This paper performs a comparative study on the statistical-variation tolerance between two crossbar architectures which are the complementary and twin architectures. In this comparative study, 10 greyscale images and 26 black-and-white alphabet characters are tested using the circuit simulator to compare the recognition rate with varying statistical variation and correlation parameters. As with the simulation results of 10 greyscale image recognitions, the twin crossbar shows better recognition rate by 4 % on average than the complementary one, when the inter-array correlation = 1 and intra-array correlation = 0. When the inter-array correlation = 1 and intra-array correlation = 1, the twin architecture can recognize better by 5.6 % on average than the complementary one. Similarly, when the inter-array correlation = 1 and intra-array correlation = 0, the twin architecture can recognize 26 alphabet characters better by 4.5 % on average than the complementary one. When the inter-array correlation = 1 and intra-array correlation = 1, the twin architecture is better by 6 % on average than the complementary one. By summary, we can conclude that the twin crossbar is more robust than the complementary one under the same amounts of statistical variation and correlation. Springer US 2015-10-16 /pmc/articles/PMC4608951/ /pubmed/26474886 http://dx.doi.org/10.1186/s11671-015-1106-x Text en © Truong et al. 2015 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
spellingShingle | Nano Express Truong, Son Ngoc Shin, SangHak Byeon, Sang-Don Song, JaeSang Mo, Hyun-Sun Min, Kyeong-Sik Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition |
title | Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition |
title_full | Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition |
title_fullStr | Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition |
title_full_unstemmed | Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition |
title_short | Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition |
title_sort | comparative study on statistical-variation tolerance between complementary crossbar and twin crossbar of binary nano-scale memristors for pattern recognition |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4608951/ https://www.ncbi.nlm.nih.gov/pubmed/26474886 http://dx.doi.org/10.1186/s11671-015-1106-x |
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