Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the...

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Detalles Bibliográficos
Autores principales: Wang, K., Sanderink, J. G. M., Bolhuis, T., van der Wiel, W. G., de Jong, M. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614445/
https://www.ncbi.nlm.nih.gov/pubmed/26486931
http://dx.doi.org/10.1038/srep15498

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614445/
https://www.ncbi.nlm.nih.gov/pubmed/26486931
http://dx.doi.org/10.1038/srep15498

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