Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg(0.51)Zn(0.49)O active components

N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content Mg(x)Zn(1–x)O for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg(0.51)Zn(0.49)O active components, wh...

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Detalles Bibliográficos
Autores principales: Liu, Lishu, Mei, Zengxia, Hou, Yaonan, Liang, Huili, Azarov, Alexander, Venkatachalapathy, Vishnukanthan, Kuznetsov, Andrej, Du, Xiaolong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614808/
https://www.ncbi.nlm.nih.gov/pubmed/26489958
http://dx.doi.org/10.1038/srep15516

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614808/
https://www.ncbi.nlm.nih.gov/pubmed/26489958
http://dx.doi.org/10.1038/srep15516

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