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Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg(0.51)Zn(0.49)O active components

N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content Mg(x)Zn(1–x)O for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg(0.51)Zn(0.49)O active components, wh...

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Detalles Bibliográficos
Autores principales:	Liu, Lishu, Mei, Zengxia, Hou, Yaonan, Liang, Huili, Azarov, Alexander, Venkatachalapathy, Vishnukanthan, Kuznetsov, Andrej, Du, Xiaolong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614808/ https://www.ncbi.nlm.nih.gov/pubmed/26489958 http://dx.doi.org/10.1038/srep15516

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