Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO(x)/TiN

The decidedly unusual co-occurrence of bipolar, complementary, and unipolar resistive switching (BRS, CRS, and URS, respectively) behavior under the same high set current compliance (set-CC) is discussed on the basis of filament geometry in a Pt/SiO(x)/TiN stack. Set-CC-dependent scaling behavior wi...

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Detalles Bibliográficos
Autores principales: Lim, Dong-Hyeok, Kim, Ga-Yeon, Song, Jin-Ho, Jeong, Kwang-Sik, Ko, Dae-Hong, Cho, Mann-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614918/
https://www.ncbi.nlm.nih.gov/pubmed/26489847
http://dx.doi.org/10.1038/srep15374

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614918/
https://www.ncbi.nlm.nih.gov/pubmed/26489847
http://dx.doi.org/10.1038/srep15374

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