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Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO(x)/TiN

The decidedly unusual co-occurrence of bipolar, complementary, and unipolar resistive switching (BRS, CRS, and URS, respectively) behavior under the same high set current compliance (set-CC) is discussed on the basis of filament geometry in a Pt/SiO(x)/TiN stack. Set-CC-dependent scaling behavior wi...

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Autores principales: Lim, Dong-Hyeok, Kim, Ga-Yeon, Song, Jin-Ho, Jeong, Kwang-Sik, Ko, Dae-Hong, Cho, Mann-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614918/
https://www.ncbi.nlm.nih.gov/pubmed/26489847
http://dx.doi.org/10.1038/srep15374
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author Lim, Dong-Hyeok
Kim, Ga-Yeon
Song, Jin-Ho
Jeong, Kwang-Sik
Ko, Dae-Hong
Cho, Mann-Ho
author_facet Lim, Dong-Hyeok
Kim, Ga-Yeon
Song, Jin-Ho
Jeong, Kwang-Sik
Ko, Dae-Hong
Cho, Mann-Ho
author_sort Lim, Dong-Hyeok
collection PubMed
description The decidedly unusual co-occurrence of bipolar, complementary, and unipolar resistive switching (BRS, CRS, and URS, respectively) behavior under the same high set current compliance (set-CC) is discussed on the basis of filament geometry in a Pt/SiO(x)/TiN stack. Set-CC-dependent scaling behavior with relations I(reset) ~ R(0)(–α) and V(reset) ~ R(0)(–β) differentiates BRS under low set-CC from other switching behaviors under high set-CC due to a low α and β involving a narrow filamentary path. Because such co-occurrence is observed only in the case of a high α and β involving a wide filamentary path, such a path can be classified into three different geometries according to switching behavior in detail. From the cyclic switching and a model simulation, we conclude that the reset of BRS originates from a narrower filamentary path near the top electrode than that of CRS due to the randomness of field-driven migration even under the same set-CC. Also, we conclude that URS originates from much narrower inversed conical filamentary path. Therefore, filament-geometry-dependent electric field and/or thermal effects can precisely describe the entire switching behaviors in this experiment.
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spelling pubmed-46149182015-10-29 Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO(x)/TiN Lim, Dong-Hyeok Kim, Ga-Yeon Song, Jin-Ho Jeong, Kwang-Sik Ko, Dae-Hong Cho, Mann-Ho Sci Rep Article The decidedly unusual co-occurrence of bipolar, complementary, and unipolar resistive switching (BRS, CRS, and URS, respectively) behavior under the same high set current compliance (set-CC) is discussed on the basis of filament geometry in a Pt/SiO(x)/TiN stack. Set-CC-dependent scaling behavior with relations I(reset) ~ R(0)(–α) and V(reset) ~ R(0)(–β) differentiates BRS under low set-CC from other switching behaviors under high set-CC due to a low α and β involving a narrow filamentary path. Because such co-occurrence is observed only in the case of a high α and β involving a wide filamentary path, such a path can be classified into three different geometries according to switching behavior in detail. From the cyclic switching and a model simulation, we conclude that the reset of BRS originates from a narrower filamentary path near the top electrode than that of CRS due to the randomness of field-driven migration even under the same set-CC. Also, we conclude that URS originates from much narrower inversed conical filamentary path. Therefore, filament-geometry-dependent electric field and/or thermal effects can precisely describe the entire switching behaviors in this experiment. Nature Publishing Group 2015-10-22 /pmc/articles/PMC4614918/ /pubmed/26489847 http://dx.doi.org/10.1038/srep15374 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Lim, Dong-Hyeok
Kim, Ga-Yeon
Song, Jin-Ho
Jeong, Kwang-Sik
Ko, Dae-Hong
Cho, Mann-Ho
Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO(x)/TiN
title Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO(x)/TiN
title_full Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO(x)/TiN
title_fullStr Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO(x)/TiN
title_full_unstemmed Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO(x)/TiN
title_short Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO(x)/TiN
title_sort filament geometry induced bipolar, complementary, and unipolar resistive switching under the same set current compliance in pt/sio(x)/tin
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614918/
https://www.ncbi.nlm.nih.gov/pubmed/26489847
http://dx.doi.org/10.1038/srep15374
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