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Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO(x)/TiN
The decidedly unusual co-occurrence of bipolar, complementary, and unipolar resistive switching (BRS, CRS, and URS, respectively) behavior under the same high set current compliance (set-CC) is discussed on the basis of filament geometry in a Pt/SiO(x)/TiN stack. Set-CC-dependent scaling behavior wi...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4614918/ https://www.ncbi.nlm.nih.gov/pubmed/26489847 http://dx.doi.org/10.1038/srep15374 |