In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si

Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacki...

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Detalles Bibliográficos
Autores principales: Hasegawa, Mika, Sugawara, Kenta, Suto, Ryota, Sambonsuge, Shota, Teraoka, Yuden, Yoshigoe, Akitaka, Filimonov, Sergey, Fukidome, Hirokazu, Suemitsu, Maki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623077/
https://www.ncbi.nlm.nih.gov/pubmed/26501833
http://dx.doi.org/10.1186/s11671-015-1131-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623077/
https://www.ncbi.nlm.nih.gov/pubmed/26501833
http://dx.doi.org/10.1186/s11671-015-1131-9

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