In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si

Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacki...

Descripción completa

Detalles Bibliográficos
Autores principales: Hasegawa, Mika, Sugawara, Kenta, Suto, Ryota, Sambonsuge, Shota, Teraoka, Yuden, Yoshigoe, Akitaka, Filimonov, Sergey, Fukidome, Hirokazu, Suemitsu, Maki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623077/
https://www.ncbi.nlm.nih.gov/pubmed/26501833
http://dx.doi.org/10.1186/s11671-015-1131-9
_version_ 1782397637917409280
author Hasegawa, Mika
Sugawara, Kenta
Suto, Ryota
Sambonsuge, Shota
Teraoka, Yuden
Yoshigoe, Akitaka
Filimonov, Sergey
Fukidome, Hirokazu
Suemitsu, Maki
author_facet Hasegawa, Mika
Sugawara, Kenta
Suto, Ryota
Sambonsuge, Shota
Teraoka, Yuden
Yoshigoe, Akitaka
Filimonov, Sergey
Fukidome, Hirokazu
Suemitsu, Maki
author_sort Hasegawa, Mika
collection PubMed
description Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacking order is, from the surface to the bulk, Ni carbides(Ni(3)C/NiC(x))/graphene/Ni/Ni silicides (Ni(2)Si/NiSi)/3C-SiC/Si. In situ SR-XPS during the graphitization annealing clarified that graphene is formed during the cooling stage. We conclude that Ni silicide and Ni carbide formation play an essential role in the formation of graphene.
format Online
Article
Text
id pubmed-4623077
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher Springer US
record_format MEDLINE/PubMed
spelling pubmed-46230772015-11-04 In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si Hasegawa, Mika Sugawara, Kenta Suto, Ryota Sambonsuge, Shota Teraoka, Yuden Yoshigoe, Akitaka Filimonov, Sergey Fukidome, Hirokazu Suemitsu, Maki Nanoscale Res Lett Nano Express Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacking order is, from the surface to the bulk, Ni carbides(Ni(3)C/NiC(x))/graphene/Ni/Ni silicides (Ni(2)Si/NiSi)/3C-SiC/Si. In situ SR-XPS during the graphitization annealing clarified that graphene is formed during the cooling stage. We conclude that Ni silicide and Ni carbide formation play an essential role in the formation of graphene. Springer US 2015-10-26 /pmc/articles/PMC4623077/ /pubmed/26501833 http://dx.doi.org/10.1186/s11671-015-1131-9 Text en © Hasegawa et al. 2015 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Hasegawa, Mika
Sugawara, Kenta
Suto, Ryota
Sambonsuge, Shota
Teraoka, Yuden
Yoshigoe, Akitaka
Filimonov, Sergey
Fukidome, Hirokazu
Suemitsu, Maki
In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si
title In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si
title_full In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si
title_fullStr In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si
title_full_unstemmed In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si
title_short In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si
title_sort in situ sr-xps observation of ni-assisted low-temperature formation of epitaxial graphene on 3c-sic/si
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623077/
https://www.ncbi.nlm.nih.gov/pubmed/26501833
http://dx.doi.org/10.1186/s11671-015-1131-9
work_keys_str_mv AT hasegawamika insitusrxpsobservationofniassistedlowtemperatureformationofepitaxialgrapheneon3csicsi
AT sugawarakenta insitusrxpsobservationofniassistedlowtemperatureformationofepitaxialgrapheneon3csicsi
AT sutoryota insitusrxpsobservationofniassistedlowtemperatureformationofepitaxialgrapheneon3csicsi
AT sambonsugeshota insitusrxpsobservationofniassistedlowtemperatureformationofepitaxialgrapheneon3csicsi
AT teraokayuden insitusrxpsobservationofniassistedlowtemperatureformationofepitaxialgrapheneon3csicsi
AT yoshigoeakitaka insitusrxpsobservationofniassistedlowtemperatureformationofepitaxialgrapheneon3csicsi
AT filimonovsergey insitusrxpsobservationofniassistedlowtemperatureformationofepitaxialgrapheneon3csicsi
AT fukidomehirokazu insitusrxpsobservationofniassistedlowtemperatureformationofepitaxialgrapheneon3csicsi
AT suemitsumaki insitusrxpsobservationofniassistedlowtemperatureformationofepitaxialgrapheneon3csicsi

Ejemplares similares