Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements

Epitaxial InAs quantum dots grown on GaAs substrate are being used in several applications ranging from quantum communications to solar cells. The growth mechanism of these dots also helps us to explore fundamental aspects of self-organized processes. Here we show that composition and strain profile...

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Detalles Bibliográficos
Autores principales: Sharma, Manjula, Sanyal, Milan K., Farrer, Ian, Ritchie, David A., Dey, Arka B., Bhattacharyya, Arpan, Seeck, Oliver H., Skiba-Szymanska, Joanna, Felle, Martin, Bennett, Anthony J., Shields, Andrew J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623704/
https://www.ncbi.nlm.nih.gov/pubmed/26506865
http://dx.doi.org/10.1038/srep15732

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623704/
https://www.ncbi.nlm.nih.gov/pubmed/26506865
http://dx.doi.org/10.1038/srep15732

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