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Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements

Epitaxial InAs quantum dots grown on GaAs substrate are being used in several applications ranging from quantum communications to solar cells. The growth mechanism of these dots also helps us to explore fundamental aspects of self-organized processes. Here we show that composition and strain profile...

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Autores principales: Sharma, Manjula, Sanyal, Milan K., Farrer, Ian, Ritchie, David A., Dey, Arka B., Bhattacharyya, Arpan, Seeck, Oliver H., Skiba-Szymanska, Joanna, Felle, Martin, Bennett, Anthony J., Shields, Andrew J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623704/
https://www.ncbi.nlm.nih.gov/pubmed/26506865
http://dx.doi.org/10.1038/srep15732
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author Sharma, Manjula
Sanyal, Milan K.
Farrer, Ian
Ritchie, David A.
Dey, Arka B.
Bhattacharyya, Arpan
Seeck, Oliver H.
Skiba-Szymanska, Joanna
Felle, Martin
Bennett, Anthony J.
Shields, Andrew J.
author_facet Sharma, Manjula
Sanyal, Milan K.
Farrer, Ian
Ritchie, David A.
Dey, Arka B.
Bhattacharyya, Arpan
Seeck, Oliver H.
Skiba-Szymanska, Joanna
Felle, Martin
Bennett, Anthony J.
Shields, Andrew J.
author_sort Sharma, Manjula
collection PubMed
description Epitaxial InAs quantum dots grown on GaAs substrate are being used in several applications ranging from quantum communications to solar cells. The growth mechanism of these dots also helps us to explore fundamental aspects of self-organized processes. Here we show that composition and strain profile of the quantum dots can be tuned by controlling in-plane density of the dots over the substrate with the help of substrate-temperature profile. The compositional profile extracted from grazing incidence x-ray measurements show substantial amount of inter-diffusion of Ga and In within the QD as a function of height in the low-density region giving rise to higher variation of lattice parameters. The QDs grown with high in-plane density show much less spread in lattice parameter giving almost flat density of In over the entire height of an average QD and much narrower photoluminescence (PL) line. The results have been verified with three different amounts of In deposition giving systematic variation of the In composition as a function of average quantum dot height and average energy of PL emission.
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spelling pubmed-46237042015-11-03 Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements Sharma, Manjula Sanyal, Milan K. Farrer, Ian Ritchie, David A. Dey, Arka B. Bhattacharyya, Arpan Seeck, Oliver H. Skiba-Szymanska, Joanna Felle, Martin Bennett, Anthony J. Shields, Andrew J. Sci Rep Article Epitaxial InAs quantum dots grown on GaAs substrate are being used in several applications ranging from quantum communications to solar cells. The growth mechanism of these dots also helps us to explore fundamental aspects of self-organized processes. Here we show that composition and strain profile of the quantum dots can be tuned by controlling in-plane density of the dots over the substrate with the help of substrate-temperature profile. The compositional profile extracted from grazing incidence x-ray measurements show substantial amount of inter-diffusion of Ga and In within the QD as a function of height in the low-density region giving rise to higher variation of lattice parameters. The QDs grown with high in-plane density show much less spread in lattice parameter giving almost flat density of In over the entire height of an average QD and much narrower photoluminescence (PL) line. The results have been verified with three different amounts of In deposition giving systematic variation of the In composition as a function of average quantum dot height and average energy of PL emission. Nature Publishing Group 2015-10-28 /pmc/articles/PMC4623704/ /pubmed/26506865 http://dx.doi.org/10.1038/srep15732 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Sharma, Manjula
Sanyal, Milan K.
Farrer, Ian
Ritchie, David A.
Dey, Arka B.
Bhattacharyya, Arpan
Seeck, Oliver H.
Skiba-Szymanska, Joanna
Felle, Martin
Bennett, Anthony J.
Shields, Andrew J.
Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements
title Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements
title_full Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements
title_fullStr Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements
title_full_unstemmed Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements
title_short Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements
title_sort density dependent composition of inas quantum dots extracted from grazing incidence x-ray diffraction measurements
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623704/
https://www.ncbi.nlm.nih.gov/pubmed/26506865
http://dx.doi.org/10.1038/srep15732
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