a-SiN(x):H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development of next generation non-volatile memory. Here we show that a high performance and ultra-low power resistive random access memory (RRAM) based on an Al/a-SiN(x):H/p(+)-Si structure...

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Detalles Bibliográficos
Autores principales: Jiang, Xiaofan, Ma, Zhongyuan, Xu, Jun, Chen, Kunji, Xu, Ling, Li, Wei, Huang, Xinfan, Feng, Duan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623785/
https://www.ncbi.nlm.nih.gov/pubmed/26508086
http://dx.doi.org/10.1038/srep15762

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623785/
https://www.ncbi.nlm.nih.gov/pubmed/26508086
http://dx.doi.org/10.1038/srep15762

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