a-SiN(x):H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development of next generation non-volatile memory. Here we show that a high performance and ultra-low power resistive random access memory (RRAM) based on an Al/a-SiN(x):H/p(+)-Si structure can be achieved by tuning the Si dangling bond conduction paths. We reveal the intrinsic relationship between the Si dangling bonds and the N/Si ratio x for the a-SiN(x):H films, which ensures that the programming current can be reduced to less than 1 μA by increasing the value of x. Theoretically calculated current-voltage (I–V ) curves combined with the temperature dependence of the I–V characteristics confirm that, for the low-resistance state (LRS), the Si dangling bond conduction paths obey the trap-assisted tunneling model. In the high-resistance state (HRS), conduction is dominated by either hopping or Poole–Frenkel (P–F) processes. Our introduction of hydrogen in the a-SiN(x):H layer provides a new way to control the Si dangling bond conduction paths, and thus opens up a research field for ultra-low power Si-based RRAM.