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a-SiN(x):H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths
The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development of next generation non-volatile memory. Here we show that a high performance and ultra-low power resistive random access memory (RRAM) based on an Al/a-SiN(x):H/p(+)-Si structure...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4623785/ https://www.ncbi.nlm.nih.gov/pubmed/26508086 http://dx.doi.org/10.1038/srep15762 |