New Insights on the Burstein-Moss Shift and Band Gap Narrowing in Indium-Doped Zinc Oxide Thin Films

The Burstein-Moss shift and band gap narrowing of sputtered indium-doped zinc oxide (IZO) thin films are investigated as a function of carrier concentrations. The optical band gap shifts below the carrier concentration of 5.61 × 10(19) cm(-3) are well-described by the Burstein-Moss model. For carrie...

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Detalles Bibliográficos
Autores principales: Saw, K. G., Aznan, N. M., Yam, F. K., Ng, S. S., Pung, S. Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2015
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4627753/
https://www.ncbi.nlm.nih.gov/pubmed/26517364
http://dx.doi.org/10.1371/journal.pone.0141180

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4627753/
https://www.ncbi.nlm.nih.gov/pubmed/26517364
http://dx.doi.org/10.1371/journal.pone.0141180

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