Thickness effect of ultra-thin Ta(2)O(5) resistance switching layer in 28 nm-diameter memory cell

Resistance switching (RS) devices with ultra-thin Ta(2)O(5) switching layer (0.5–2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath...

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Detalles Bibliográficos
Autores principales: Park, Tae Hyung, Song, Seul Ji, Kim, Hae Jin, Kim, Soo Gil, Chung, Suock, Kim, Beom Yong, Lee, Kee Jeung, Kim, Kyung Min, Choi, Byung Joon, Hwang, Cheol Seong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4630583/
https://www.ncbi.nlm.nih.gov/pubmed/26527044
http://dx.doi.org/10.1038/srep15965

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4630583/
https://www.ncbi.nlm.nih.gov/pubmed/26527044
http://dx.doi.org/10.1038/srep15965

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