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Thickness effect of ultra-thin Ta(2)O(5) resistance switching layer in 28 nm-diameter memory cell
Resistance switching (RS) devices with ultra-thin Ta(2)O(5) switching layer (0.5–2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4630583/ https://www.ncbi.nlm.nih.gov/pubmed/26527044 http://dx.doi.org/10.1038/srep15965 |