Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate

We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, Ga...

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Detalles Bibliográficos
Autores principales: Yao, Liang-Zi, Crisostomo, Christian P., Yeh, Chun-Chen, Lai, Shu-Ming, Huang, Zhi-Quan, Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, Bansil, Arun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4633599/
https://www.ncbi.nlm.nih.gov/pubmed/26537227
http://dx.doi.org/10.1038/srep15463

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4633599/
https://www.ncbi.nlm.nih.gov/pubmed/26537227
http://dx.doi.org/10.1038/srep15463

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