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Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate
We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, Ga...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4633599/ https://www.ncbi.nlm.nih.gov/pubmed/26537227 http://dx.doi.org/10.1038/srep15463 |
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author | Yao, Liang-Zi Crisostomo, Christian P. Yeh, Chun-Chen Lai, Shu-Ming Huang, Zhi-Quan Hsu, Chia-Hsiu Chuang, Feng-Chuan Lin, Hsin Bansil, Arun |
author_facet | Yao, Liang-Zi Crisostomo, Christian P. Yeh, Chun-Chen Lai, Shu-Ming Huang, Zhi-Quan Hsu, Chia-Hsiu Chuang, Feng-Chuan Lin, Hsin Bansil, Arun |
author_sort | Yao, Liang-Zi |
collection | PubMed |
description | We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates. |
format | Online Article Text |
id | pubmed-4633599 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-46335992015-11-05 Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate Yao, Liang-Zi Crisostomo, Christian P. Yeh, Chun-Chen Lai, Shu-Ming Huang, Zhi-Quan Hsu, Chia-Hsiu Chuang, Feng-Chuan Lin, Hsin Bansil, Arun Sci Rep Article We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates. Nature Publishing Group 2015-11-05 /pmc/articles/PMC4633599/ /pubmed/26537227 http://dx.doi.org/10.1038/srep15463 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Yao, Liang-Zi Crisostomo, Christian P. Yeh, Chun-Chen Lai, Shu-Ming Huang, Zhi-Quan Hsu, Chia-Hsiu Chuang, Feng-Chuan Lin, Hsin Bansil, Arun Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate |
title | Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate |
title_full | Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate |
title_fullStr | Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate |
title_full_unstemmed | Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate |
title_short | Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate |
title_sort | predicted growth of two-dimensional topological insulator thin films of iii-v compounds on si(111) substrate |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4633599/ https://www.ncbi.nlm.nih.gov/pubmed/26537227 http://dx.doi.org/10.1038/srep15463 |
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