Cargando…
Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate
We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, Ga...
Autores principales: | Yao, Liang-Zi, Crisostomo, Christian P., Yeh, Chun-Chen, Lai, Shu-Ming, Huang, Zhi-Quan, Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, Bansil, Arun |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4633599/ https://www.ncbi.nlm.nih.gov/pubmed/26537227 http://dx.doi.org/10.1038/srep15463 |
Ejemplares similares
-
Two-dimensional Topological Crystalline Insulator Phase in Sb/Bi Planar Honeycomb with Tunable Dirac Gap
por: Hsu, Chia-Hsiu, et al.
Publicado: (2016) -
Topologically nontrivial bismuth(111) thin films
por: Yao, Meng-Yu, et al.
Publicado: (2016) -
Effects of substrate bias on the sputtering of high density (111)-nanotwinned Cu films on SiC chips
por: Yang, Zi-Hong, et al.
Publicado: (2022) -
Structural properties of thin-film ferromagnetic topological insulators
por: Richardson, C. L., et al.
Publicado: (2017) -
RF Sputtering, Post-Annealing Treatment and Characterizations of ZnO (002) Thin Films on 3C-SiC (111)/Si (111) Substrates
por: Valliyil Sasi, Visakh, et al.
Publicado: (2017)