The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates

Epitaxial lateral overgrowth in tandem with the first-principles calculation was employed to investigate the determining factor of a preferred orientation of GaN on SiO2-patterned m-plane sapphire substrates. We found that the (1[Image: see text]00)-orientation is favored over the (1[Image: see text...

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Detalles Bibliográficos
Autores principales: Jue, Miyeon, Kim, Cheol-Woon, Kang, Seoung-Hun, Yoon, Hansub, Jang, Dongsoo, Kwon, Young-Kyun, Kim, Chinkyo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4637901/
https://www.ncbi.nlm.nih.gov/pubmed/26548446
http://dx.doi.org/10.1038/srep16236

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4637901/
https://www.ncbi.nlm.nih.gov/pubmed/26548446
http://dx.doi.org/10.1038/srep16236

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