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The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates
Epitaxial lateral overgrowth in tandem with the first-principles calculation was employed to investigate the determining factor of a preferred orientation of GaN on SiO2-patterned m-plane sapphire substrates. We found that the (1[Image: see text]00)-orientation is favored over the (1[Image: see text...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4637901/ https://www.ncbi.nlm.nih.gov/pubmed/26548446 http://dx.doi.org/10.1038/srep16236 |