Strain induced piezoelectric effect in black phosphorus and MoS(2) van der Waals heterostructure

The structural, electronic, transport and optical properties of black phosphorus/MoS(2) (BP/MoS(2)) van der Waals (vdw) heterostructure are investigated by using first principles calculations. The band gap of BP/MoS(2) bilayer decreases with the applied normal compressive strain and a semiconductor-...

Descripción completa

Detalles Bibliográficos
Autores principales: Huang, Le, Li, Yan, Wei, Zhongming, Li, Jingbo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4639735/
https://www.ncbi.nlm.nih.gov/pubmed/26553370
http://dx.doi.org/10.1038/srep16448

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4639735/
https://www.ncbi.nlm.nih.gov/pubmed/26553370
http://dx.doi.org/10.1038/srep16448

Ejemplares similares