Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching

A tribochemistry-induced selective etching approach is proposed for the first time to produce silicon nanostructures without lattice damage. With a ~1 nm thick SiO(x) film as etching mask grown on Si(100) surface (Si(100)/SiO(x)) by wet-oxidation technique, nano-trenches can be produced through the...

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Detalles Bibliográficos
Autores principales: Guo, Jian, Yu, Bingjun, Chen, Lei, Qian, Linmao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4642297/
https://www.ncbi.nlm.nih.gov/pubmed/26559014
http://dx.doi.org/10.1038/srep16472

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4642297/
https://www.ncbi.nlm.nih.gov/pubmed/26559014
http://dx.doi.org/10.1038/srep16472

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