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Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching
A tribochemistry-induced selective etching approach is proposed for the first time to produce silicon nanostructures without lattice damage. With a ~1 nm thick SiO(x) film as etching mask grown on Si(100) surface (Si(100)/SiO(x)) by wet-oxidation technique, nano-trenches can be produced through the...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4642297/ https://www.ncbi.nlm.nih.gov/pubmed/26559014 http://dx.doi.org/10.1038/srep16472 |