Grain boundary resistance to amorphization of nanocrystalline silicon carbide

Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accum...

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Detalles Bibliográficos
Autores principales: Chen, Dong, Gao, Fei, Liu, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4642319/
https://www.ncbi.nlm.nih.gov/pubmed/26558694
http://dx.doi.org/10.1038/srep16602

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4642319/
https://www.ncbi.nlm.nih.gov/pubmed/26558694
http://dx.doi.org/10.1038/srep16602

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