Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail....

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Detalles Bibliográficos
Autores principales: Wang, Wenliang, Yang, Weijia, Lin, Yunhao, Zhou, Shizhong, Li, Guoqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4643238/
https://www.ncbi.nlm.nih.gov/pubmed/26563573
http://dx.doi.org/10.1038/srep16453

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4643238/
https://www.ncbi.nlm.nih.gov/pubmed/26563573
http://dx.doi.org/10.1038/srep16453

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