Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal

In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H(2)-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crysta...

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Detalles Bibliográficos
Autores principales: Sharma, Subash, Kalita, Golap, Vishwakarma, Riteshkumar, Zulkifli, Zurita, Tanemura, Masaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4650756/
https://www.ncbi.nlm.nih.gov/pubmed/25994455
http://dx.doi.org/10.1038/srep10426

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4650756/
https://www.ncbi.nlm.nih.gov/pubmed/25994455
http://dx.doi.org/10.1038/srep10426

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