Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111)

We report structural and electrical properties of catalyst-free Si-doped InAs nanowires (NWs) formed on Si(111) substrates. The average diameter of Si-doped InAs NWs was almost similar to that of undoped NWs with a slight increase in height. In the previous works, the shape and size of InAs NWs form...

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Detalles Bibliográficos
Autores principales: Park, Dong Woo, Jeon, Seong Gi, Lee, Cheul-Ro, Lee, Sang Jun, Song, Jae Yong, Kim, Jun Oh, Noh, Sam Kyu, Leem, Jae-Young, Kim, Jin Soo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4652218/
https://www.ncbi.nlm.nih.gov/pubmed/26581781
http://dx.doi.org/10.1038/srep16652

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4652218/
https://www.ncbi.nlm.nih.gov/pubmed/26581781
http://dx.doi.org/10.1038/srep16652

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