Electrochemical gating-induced reversible and drastic resistance switching in VO(2) nanowires

Reversible and drastic modulation of the transport properties in vanadium dioxide (VO(2)) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowe...

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Detalles Bibliográficos
Autores principales: Sasaki, Tsubasa, Ueda, Hiroki, Kanki, Teruo, Tanaka, Hidekazu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4653652/
https://www.ncbi.nlm.nih.gov/pubmed/26584679
http://dx.doi.org/10.1038/srep17080

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4653652/
https://www.ncbi.nlm.nih.gov/pubmed/26584679
http://dx.doi.org/10.1038/srep17080

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