Electrochemical gating-induced reversible and drastic resistance switching in VO(2) nanowires

Reversible and drastic modulation of the transport properties in vanadium dioxide (VO(2)) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowe...

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Autores principales: Sasaki, Tsubasa, Ueda, Hiroki, Kanki, Teruo, Tanaka, Hidekazu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4653652/
https://www.ncbi.nlm.nih.gov/pubmed/26584679
http://dx.doi.org/10.1038/srep17080
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author Sasaki, Tsubasa
Ueda, Hiroki
Kanki, Teruo
Tanaka, Hidekazu
author_facet Sasaki, Tsubasa
Ueda, Hiroki
Kanki, Teruo
Tanaka, Hidekazu
author_sort Sasaki, Tsubasa
collection PubMed
description Reversible and drastic modulation of the transport properties in vanadium dioxide (VO(2)) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to investigate behavior of revealed hydrogen intercalation and diffusion aspects with time and spatial evolutions in nanowires. These results show that air nanogaps can operate as an electrochemical reaction field, even in a gaseous atmosphere, and offer new directions to explore emerging functions for electronic and energy devices in oxides.
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spelling pubmed-46536522015-11-25 Electrochemical gating-induced reversible and drastic resistance switching in VO(2) nanowires Sasaki, Tsubasa Ueda, Hiroki Kanki, Teruo Tanaka, Hidekazu Sci Rep Article Reversible and drastic modulation of the transport properties in vanadium dioxide (VO(2)) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to investigate behavior of revealed hydrogen intercalation and diffusion aspects with time and spatial evolutions in nanowires. These results show that air nanogaps can operate as an electrochemical reaction field, even in a gaseous atmosphere, and offer new directions to explore emerging functions for electronic and energy devices in oxides. Nature Publishing Group 2015-11-20 /pmc/articles/PMC4653652/ /pubmed/26584679 http://dx.doi.org/10.1038/srep17080 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Sasaki, Tsubasa
Ueda, Hiroki
Kanki, Teruo
Tanaka, Hidekazu
Electrochemical gating-induced reversible and drastic resistance switching in VO(2) nanowires
title Electrochemical gating-induced reversible and drastic resistance switching in VO(2) nanowires
title_full Electrochemical gating-induced reversible and drastic resistance switching in VO(2) nanowires
title_fullStr Electrochemical gating-induced reversible and drastic resistance switching in VO(2) nanowires
title_full_unstemmed Electrochemical gating-induced reversible and drastic resistance switching in VO(2) nanowires
title_short Electrochemical gating-induced reversible and drastic resistance switching in VO(2) nanowires
title_sort electrochemical gating-induced reversible and drastic resistance switching in vo(2) nanowires
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4653652/
https://www.ncbi.nlm.nih.gov/pubmed/26584679
http://dx.doi.org/10.1038/srep17080
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AT kankiteruo electrochemicalgatinginducedreversibleanddrasticresistanceswitchinginvo2nanowires
AT tanakahidekazu electrochemicalgatinginducedreversibleanddrasticresistanceswitchinginvo2nanowires

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