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Electrochemical gating-induced reversible and drastic resistance switching in VO(2) nanowires

Reversible and drastic modulation of the transport properties in vanadium dioxide (VO(2)) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowe...

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Detalles Bibliográficos
Autores principales:	Sasaki, Tsubasa, Ueda, Hiroki, Kanki, Teruo, Tanaka, Hidekazu
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4653652/ https://www.ncbi.nlm.nih.gov/pubmed/26584679 http://dx.doi.org/10.1038/srep17080

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