Self-regulation of charged defect compensation and formation energy pinning in semiconductors

Current theoretical analyses of defect properties without solving the detailed balance equations often estimate Fermi-level pinning position by omitting free carriers and assume defect concentrations can be always tuned by atomic chemical potentials. This could be misleading in some circumstance. He...

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Detalles Bibliográficos
Autores principales: Yang, Ji-Hui, Yin, Wan-Jian, Park, Ji-Sang, Wei, Su-Huai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4653759/
https://www.ncbi.nlm.nih.gov/pubmed/26584670
http://dx.doi.org/10.1038/srep16977

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4653759/
https://www.ncbi.nlm.nih.gov/pubmed/26584670
http://dx.doi.org/10.1038/srep16977

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