Cargando…
Self-regulation of charged defect compensation and formation energy pinning in semiconductors
Current theoretical analyses of defect properties without solving the detailed balance equations often estimate Fermi-level pinning position by omitting free carriers and assume defect concentrations can be always tuned by atomic chemical potentials. This could be misleading in some circumstance. He...
Autores principales: | Yang, Ji-Hui, Yin, Wan-Jian, Park, Ji-Sang, Wei, Su-Huai |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4653759/ https://www.ncbi.nlm.nih.gov/pubmed/26584670 http://dx.doi.org/10.1038/srep16977 |
Ejemplares similares
-
Suppression of compensating native defect formation during semiconductor processing via excess carriers
por: Alberi, K., et al.
Publicado: (2016) -
Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion
por: Seebauer, Edmund G, et al.
Publicado: (2009) -
Energy and charge transfer in organic semiconductors
por: Masuda, Kohzoh, et al.
Publicado: (1974) -
Self-compensation in arsenic doping of CdTe
por: Ablekim, Tursun, et al.
Publicado: (2017) -
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
por: Liu, Yuanyue, et al.
Publicado: (2016)