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Electro-Physical Technique for Post-Fabrication Measurements of CMOS Process Layer Thicknesses
This paper presents a combined physical and electrical post-fabrication method for determining the thicknesses of the various layers in a commercial 1.5 μm complementary-metal-oxide-semiconductor (CMOS) foundry process available through MOSIS. Forty-two thickness values are obtained from physical st...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
2007
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4656013/ https://www.ncbi.nlm.nih.gov/pubmed/27110468 http://dx.doi.org/10.6028/jres.112.018 |