Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors)....

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Detalles Bibliográficos
Autores principales: Penumatcha, Ashish V., Salazar, Ramon B., Appenzeller, Joerg
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660372/
https://www.ncbi.nlm.nih.gov/pubmed/26563458
http://dx.doi.org/10.1038/ncomms9948

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660372/
https://www.ncbi.nlm.nih.gov/pubmed/26563458
http://dx.doi.org/10.1038/ncomms9948

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