Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires

The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young’s modulus and the linear coefficient of thermal expansion through se...

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Detalles Bibliográficos
Autores principales: Das, Suvankar, Moitra, Amitava, Bhattacharya, Mishreyee, Dutta, Amlan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2015
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660882/
https://www.ncbi.nlm.nih.gov/pubmed/26665068
http://dx.doi.org/10.3762/bjnano.6.201

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660882/
https://www.ncbi.nlm.nih.gov/pubmed/26665068
http://dx.doi.org/10.3762/bjnano.6.201

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