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Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires
The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young’s modulus and the linear coefficient of thermal expansion through se...
Autores principales: | Das, Suvankar, Moitra, Amitava, Bhattacharya, Mishreyee, Dutta, Amlan |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4660882/ https://www.ncbi.nlm.nih.gov/pubmed/26665068 http://dx.doi.org/10.3762/bjnano.6.201 |
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