Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire

Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. We report here detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates and utilize them to en...

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Detalles Bibliográficos
Autores principales: Tanaka, Atsunori, Chen, Renjie, Jungjohann, Katherine L., Dayeh, Shadi A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4661445/
https://www.ncbi.nlm.nih.gov/pubmed/26611405
http://dx.doi.org/10.1038/srep17314

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4661445/
https://www.ncbi.nlm.nih.gov/pubmed/26611405
http://dx.doi.org/10.1038/srep17314

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