Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM

In-situ transmission electron microscopy (in-situ TEM) was performed to investigate the switching operation of a resistive random access memory (ReRAM) made of copper, tungsten oxide and titanium nitride (Cu/WO(x)/TiN). In the first Set (Forming) operation to initialize the device, precipitation app...

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Detalles Bibliográficos
Autores principales: Arita, Masashi, Takahashi, Akihito, Ohno, Yuuki, Nakane, Akitoshi, Tsurumaki-Fukuchi, Atsushi, Takahashi, Yasuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4661473/
https://www.ncbi.nlm.nih.gov/pubmed/26611856
http://dx.doi.org/10.1038/srep17103

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4661473/
https://www.ncbi.nlm.nih.gov/pubmed/26611856
http://dx.doi.org/10.1038/srep17103

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